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m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support M02016 1 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 applications ?gpon ?gepon ? gigabit ethernet ? fiber channel the M02016 is a cmos transimpedance amplifier with ag c. the agc gives a wide dynamic range of 35 db. the high transimpedance gain of 24 k ensures good sensitivity. for optimum system pe rformance, the M02016 die should be mounted with a silicon or inga as pin photo detector inside a lensed to-can or other optical sub-assembly. the M02016 can either bias the pin diode from the internal regulator or use an externally biased pin diode. a replica of the average photodiode current is available at the mon pad for photo-alignment. typical applications diagram pina dout doutb v cc pink 1 nf M02016 470 pf v cc gnd tia bond pad to can lead typically ac-coupled to limiting amplifier limiting amplifier features ? typical ?29dbm sensitivity, +6 dbm saturation at 1.25 gbps when used with 0.9 a/w ingaas pin. (cpd 0.5pf, ber 10 ?10 ) ? typical differential transimpedance: 24 k ? fabricated in standard cmos ? differential output ? standard +3.3 volt supply ? available in die form only ? monitor output ? agc provides dynamic range of 35 db ? internal or external bias for photodiode ? pin or apd sensor ? same pad layout and die size as m02011/13/14/15
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 2 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 ordering information part number package operating temperature M02016-xx* waffle pack ?40 c to 85 c M02016-xx* expanded whole wafer on a ring ?40 c to 85 c note: *xx represents the revision number. please cont act your local sales offi ce for correct digits. revision history revision level date description v4 release may 2015 updated logos and page layout. no content changes. g (v3) release august 2007 corrected pina, agc, and dout absolute maximum voltage in table 1-1 . removed imon graph from the typical performance graphs ( chapter 1 ). f (v2) release june 2007 revised table 1-1 separate applications information from functional description. add notes to clarify the bonding procedure. e (v1) release november 2004 production release. typical eye diagram eye diagram for 1.25 gbps at -27 dbm input signal pad configuration mon pina pink v cc agc dout gnd gnd doutgnd 1 2 3 4 56 7 8 9 10 11 12 v cc dout doutgnd die size 1090 x 880 m
m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support M02016 3 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 1.0 product specification 1.1 absolute maximum ratings these are the absolute maximum ratings at or beyo nd which the ic can be expected to fail or be damaged. reliable operation at these extremes for any length of time is not implied. 1.2 recommended operating conditions table 1-1. absolute maximum ratings symbol parameter rating units v cc power supply (v cc - gnd) -0.4 to +4.0 v t stg storage temperature -65 to +150 c i in pina input current 8.0 (1, 2) ma pp v pina, v agc maximum input voltage at pina and agc -0.4 to +2.0 (2) v i pink maximum average current sourced out of pink 10.0 ma v pink , v mon maximum input voltage at pink and mon -0.4 to vcc +0.4 v i dout maximum average current sourced out of dout and doutb 10.0 (3) ma v dout maximum input voltage at dout and doutb 0.0 to +2.0 (3) v notes: 1. equivalent to 4.9 ma average current. 2. do not exceed either the i in or v pina rating. pina damage will result in performance degradation which is difficult to detect. 3. do not exceed either the i dout or v dout rating. output device damage could occur. table 1-2. recommended operating conditions symbol parameter rating units v cc power supply (v cc ? gnd) 3.3 10% v c pd max. photodiode capacitance (v r = 1.7 v, when using pink), for 1.25 gbps data rate 0.5 pf t a operating ambient temperature ?40 to +85 c
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 4 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 1.3 dc characteristics 1.4 ac characteristics table 1-3. dc characteristics symbol parameter minimum typical maximum units v b photodiode bias voltage (pink ? pina) 1.7 2.0 2.2 v v cm common mode output voltage 0.7 1 1.3 v i cc supply current (no loads) 23 30 39 ma r load recommended differential output loading ? 100 (1) ? note: 1. 100 is the load presented by the limiting amplifier. table 1-4. ac characteristics symbol parameter minimum typical (1) maximum units r out output impedance (single ended) (2) 35 50 65 lfc low frequency cutoff (3) ?70115khz v d differential output voltage ? 275 500 mv dcd duty cycle distortion ? ? 40 ps dj deterministic jitter (includes dcd) ? ? 80 ps pp in_rms total input rms noise, dc to 930 mhz, cin = 0.5 pf ? 130 185 na pin example dynamic range of optical input (4) ?28 ? +6 dbm pin_mean_min opti cal sensitivity (4) ??29?dbm notes: 1. die designed to operate over an ambient temperature range of ?40 c to +85 c, t a and v cc range from 3.0?3.6v. typical values are tested at t a = 25 c and v cc = 3.3v. 2. measured at 1 mhz. 3. input ?28 dbm, extinction ratio = 10, temp = 25 c. 4. ber 10 ?10 , pd capacitance = 0.5 pf, responsivity 0.9 a/w, extinction ratio = 10.
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 5 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 1.5 dynamic characteristics table 1-5. dynamic characteristics symbol parameter minimum typical maximum units g transimpedance - single ended - differential 8 12 12 24 16 32 k bw bandwidth to ?3 db point @ ?26 dbm, 0.9a/w, 0.5 pf pd 0.7 1.0 ? ghz rc agc loop time constant ? 2 ? s i agc agc threshold 9 11 ? a pp i ovl maximum functional input current 3.6 (1) ??ma psrr power supply reject ion, f < 4 mhz 20 28 ? db note: 1. equivalent to +3.4 dbm input optical power at extinction ratio = 10, responsivity = 1.0 a/w.
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 6 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 1.6 typical performance vcc = 3.3v, temperature = 25 c, lin = 1 nh, unless otherwise stated. figure 1-1. typical performance diagrams 1 of 3 M02016 bandw idth vs. tem perature 3.3v, nom, l in = 1nh 700 800 900 1000 1100 1200 1300 1400 1500 1600 -50 0 50 100 150 junction t emper atur e (oc) bandwidth (mhz) cin = 0.3pf cin = 0.5pf cin = 0.75pf cin = 0.85pf cin = 1.0pf transimpedance vs iin 100 1000 10000 100000 1 10 100 1000 input current (ma) transimpedance (ohms) transimpedance vs. v agc 1 10 100 1000 10000 100000 00.5 11.52 v ag c (v) transimpedance (ohms)
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 7 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 vcc = 3.3v, temperature = 25 c , lin = 1 nh, unless otherwise stated. figure 1-2. typical performance diagrams 2 of 3 M02016 bandwidth vs. input capacitance 3.3v, nom, l in = 1nh 400 600 800 1000 1200 1400 1600 0.20.40.60.8 1 c in (pf) bandwidth (mhz) t = -40oc t = 0oc t = 27o c t = 85o c t = 110oc deterministic jitter vs iin 0 5 10 15 20 0.001 0.01 0.1 1 10 input current (ma p-p) jitter (ps p-p) M02016 input referred noise vs temperature 3.3v, nom, l in = 1nh 125 130 135 140 145 -40 10 60 110 junction temperature (oc) input referred noise (na rms ) cin = 0.3pf cin = 0.5pf cin = 0.75pf cin = 0.85pf cin = 1.0pf
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 8 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 vcc = 3.3v, temperature = 25 c , lin = 1 nh, unless otherwise stated. figure 1-3. typical performance diagrams 3 of 3 eye diagram for 1.25 gb/s at ?27 dbm input signal eye diagram for 1.25 gb/s at +6 dbm input signal
m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support M02016 9 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 2.0 pin/pad definitions 2.1 pin/pad definitions table 2-1. pin/pad definitions die pad no name function 1 agc monitor or force agc voltage 2v cc power pin. connect to most positive supply 3 pink common pin input. connect to photo diode cathode and a 470 pf capacitor to gnd (1) 4 pina active pin input. connect to photo diode anode 5v cc power pin. connect to most positive supply (only one v cc pad needs to be connected) 6 mon analog current sink output. current matched to average photodiode current. intended for photo-alignment use only. 7dout differential data output (goes low as light increases) 8dout gnd ground return for dout pad (2) 9 gnd ground pin. connect to the most negative supply (2) 10 gnd ground pin. connect to the most negative supply (2) 11 doutgnd ground return for dout pad (2) 12 dout differential data output (goes high as light increases) na backside backside. connect to the lo west potential, usually ground notes: 1. alternatively the photodiode cathode may be connected to a decoupled positive supply, e.g. v cc . 2. all ground pads are common on the die. only one ground pad needs to be connected to the to-can ground. however, connecting mo re than one ground pad to the to-can ground, particularly those across the die from each other can improve performance in noisy environments.
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 10 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 figure 2-1. bare die layout mon pina pink v cc agc dout gnd gnd doutgnd 1 2 3 4 56 7 8 9 10 11 12 v cc dout doutgnd
m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support M02016 11 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 3.0 functional description 3.1 overview the M02016 is a cmos transimpedance amplifier with ag c. the agc gives a wide dynamic range of 35db. the high transimpedance gain of 24 k ensures good sensitivity. for optimum system pe rformance, the M02016 die should be mounted with a silicon or inga as pin photo detector inside a lensed to-can or other optical sub-assembly. the M02016 can either bias the pin diode from the internal regulator or use an externally biased pin diode. a replica of the average photodiode current is available at the mon pad for photo-alignment. figure 3-1. M02016 block diagram dc restore phase splitter b.i.s.t. en agc pina pink mon dout dout 2.6 v 1 v dc shift
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 12 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 3.2 general description 3.2.1 tia (transimpedance amplifier) the transimpedance amplifier consists of a high gain si ngle-ended cmos amplifier (tia) with a feedback resistor. the feedback creates a virtual earth low impedance at the in put and virtually all of the input current passes through the feedback resistor, defining the voltage at the ou tput. advanced cmos design techniques are employed to maintain the stability of this st age across all input conditions. an on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to several mhz. higher freque ncy power supply noise is removed by the external 470 pf decoupling capacitor connected to pink. the circuit is designed for pin photodi odes in the ?grounded cathode? conf iguration, with the anode connected to the input of the tia and the cathode connected to ac ground, such as the provided pink terminal. reverse dc bias is applied to reduce the photodiode capacitance. avalanche photodiodes can be connected externally to a higher voltage. 3.2.2 agc the M02016 has been designed to operate over the input ra nge of +6 dbm to ?29 dbm. this represents a ratio of 1:3000 whereas the acceptable dynamic range of the out put is only 1:30 which implies a compression of 100:1 in the transimpedance. the design uses a mos transistor oper ating as a ?voltage controlled resistor? to achieve the transimpedance variation. another feature of the agc is that it only operates on si gnals greater than ?22 dbm (@ 0.9 a/w). this knee in the gain response is important when setting ?signal detect? func tions in the following post amplif ier. it also aids in active photodiode alignment. the agc pad allows the agc to be disabled during pho todiode alignment by grounding the pad through a low impedance. the agc control voltage can be monitored du ring normal operation at this pad by a high impedance (>10 m ) circuit. 3.2.3 output stage the signal from the tia enters a phase splitter followed by a dc-shift stage and a pair of voltage follower outputs. these are designed to drive a differential (100 ) load. they are stable for driving capacitive loads, such as interstage filters. each outp ut has its own gnd pad, all four gnd pads on the chip should be connected for proper operation. since the M02016 exhibits rapid roll-off (3 pole), simple external filtering is sufficient. 3.2.4 monitor o/p high impedance output sources a replica average photodi ode current for photo-alignment use. the accuracy of this signal does not meet the ddmi receive power specification (sfp-8472) and it is not intended be used as such. it is possible to use the maco m m0204x/50 limiting amplifiers? rxavg in pin to bias the photodiode cathode to provide an sfp-8472 compliant monitoring function. ensure that the voltage on v mon is in the range of 1v to v cc .
m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support M02016 13 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 4.0 applications information 4.1 recommended pin diode connections figure 4-1. suggested pin diode connection methods recommended circuit pina dout doutb v cc pink 1 nf M02016 470 pf v cc gnd tia bond pad to can lead alternative circuit: external pd/apd bias pina dout doutb v cc pink 1 nf 500 470 pf M02016 pdc _bias v cc pdc gnd tia bond pad to can lead
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 14 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 4.2 to-can layout 4.3 treatment of pink pink requires bypassing to ground with a capacitor when po wering a photo diode. if pink is not used to bias the photo diode, then it is not necessary to bypass an unused pink. figure 4-2. typical layout diagram notes: typical application inside of a 5 lead to-can. only one of the v cc pads and one of the gnd pads need to be c onnected (though in noisy environments two or more gnd pads connected may improve performance). the backside must be connected to the lowest potential, usually ground, with conductive epoxy or a similar die attach material. if a monitor output is not required then a 4 lead to-can may be used. mon pina pink v cc agc do ut gnd gnd dout gnd v cc dout dout gnd v cc mon dout doutb 1nf 470pf
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 15 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 4.4 to-can assembly recommendations figure 4-3. to-can assembly diagram M02016 ceramic shim submount to can leads pin diode to-can header ceramic shim submount to can leads to-can header not recommended example recommended example metal shim @4 or 5 M02016 pin diode @4 or 5 this bond is too long and unreliable this bond is unreliable
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 16 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 4.4.1 assembly the M02016 is designed to work with a wirebond indu ctance of 1 nh 0.25 nh. many existing to-can configurations will not allow wirebond lengths that short, sinc e the pin diode submount and the tia die are more than 1 mm away in the vertical direction, due to the need to have the pin diode in the correct focal plane. this can be remedied by raising up the tia die with a conducti ve metal shim. this will effectively reduce the bond wire length. refer to figure 4-3 for details. macom recommends ball bonding with a 1 mil (25.4 m ) gold wire. for performance reasons the pina pad is smaller than the others and also has less via material connected to it. it therefore requires more care in setting of the bonding parameters. for the same reason pina has no esd protection. in addition, please refer to the macom product bu lletin on recommended assembly procedures (document number 0201x-pbd-002-a). care must be taken when sele cting chip capacitors, since they must have good low esr characteristics up to 1.0 gh z. it is also important that the termination materials of the capacitor be compatible with the attach method used. for example, tin/lead (pb/sn ) solder finish capacitors are incompatible with silver -filled epoxies. palladium/silver (pd/ag) terminations are compatible with silver filled epox ies. solder can be used only if the substrate thick-film inks are compatible with pb/sn solders. 4.4.2 recommended assembly procedures for esd protection the following steps are recommended for to-can assembly: a. ensure good humidity control in the environment (to help minimize esd). b. consider using additional ionization of the air (also helps minimize esd). c. it is best to ensure that the body of the to-can he ader or the ground lead of the header is grounded through the wire-bonding fixture. the best solution will ensure that the v cc lead of the to-can is also grounded. when this is do ne and the procedure below is followed, the photodio de will help reduce the impact to pina of any positive charge on the wire bonder when bonding to pina, which is the very last bond placed. (because the pd is already bonded to pink and pink has an internal esd diode between itself and v cc , if v cc is grounded, this will help protect pina.) d. the most reliable protection to prevent esd damage on the die is to assure that the wirebonder (including the spool, clamp, etc.) is properly grounded. 1. wire bond the ground pad(s) of the die first. 2. then wire bond the vcc pad to the to-can lead. 3. then wire bond any other pads going to the to-c an leads (such as dout, dout and possibly mon) 4. next wire bond any capacitors inside the to-can. 5. inside the to-can, wire bond pink. 6. the final step is to wire bond pina.
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 17 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 4.5 tia use with externally biased detectors in some applications, macom tias are used with detectors biased at a voltag e greater than available from tia pin cathode supply. this works well if some basic cautions are observed. wh en turned off, the input to the tia exhibits the following i/v characteristic: in the positive direction the impedance of the input is relatively high. figure 4-4. tia use with externally biased detectors, powered off pina unbiased -300 -250 -200 -150 -100 -50 0 50 100 -800 -600 -400 -200 0 200 400 600 800 1000 1200 mv a
M02016 m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support 18 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 after the tia is turned on, the dc servo and agc circuits attempt to null any input currents (up to the absolute maximum stated in ta b l e 1 - 1 ) as shown by the i/v curve in figure 4-5 . it can be seen that any negative voltage below 200 mv is nulled and that any positive going voltage above the pina standing voltage is nulled by the dc servo. the dc servo upper bandwidth varies from part to part, but is generally at least 30 khz. when externally biasing a detector such as an apd wh ere the supply voltage of the apd exceeds that for pina ta b l e 1 - 1 , care should be taken to power up the tia first a nd to keep the tia powered up until after the power supply voltage of the apd is removed. failure to do this with the tia unpowered may result in damage to the input fet gate at pina. in some cases the damage may be very subtle, in that nearly normal operation may be experienced with the damage causing slight reductions in bandwidth and corresponding reductions in input sensitivity. figure 4-5. tia use with externally biased detectors, powered on pina biased -1000 -800 -600 -400 -200 0 200 400 600 800 1000 -300 -200 -100 0 100 200 300 400 500 600 700 mv a
m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support M02016 19 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4 5.0 die specification figure 5-1. bare die information notes: process technology: cmos, silicon nitride passivation die thickness: 300 m pad metallization: aluminium die size: 1090 m x 880 m pad opening (except pina): 86 m across flat sides pina pad: 70 m across flat sides (70 m x 70 m) pad centers in m referenced to center of device connect backside bias to ground mon pina pink v cc agc dout gnd gnd doutgnd 1 2 3 4 56 7 8 9b 10b 11 12 v cc dout doutgnd 9a 9c 10a 10a pad number pad x y 1 agc -329 -76 2 (1) v cc -329 -228 3 pink -124 -434 4 pina 124 -434 5 (1) v cc 329 -228 6 mon 329 -76 7dout 329 76 8 (1) dout gnd 329 228 9c (1, 2) gnd 329 360 9b (1, 2) gnd 255 434 9a (1, 2) gnd 124 434 10a (1, 2) gnd -124 434 10b (1, 2) gnd -255 434 10c (1, 2) gnd -329 360 11 (1) doutgnd -329 228 12 dout -329 76 notes: 1. it is only necessary to bond one v cc pad and one gnd pad. however, bonding one of each pad (if available) on each side of the die is encouraged for improved performance in noisy environ- ments. 2. each location is an ac ceptable bonding location.
m/a-com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: http://www.macom.com/support m/a-com technology solutions inc. all rights reserved. information in this document is provided in connect ion with m/a-com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom ' s terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissi ons in these materials. macom may make changes to specifications and product descriptions at any time, without notice. ma com makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities ar ising from future changes to its specifications and product descriptions. no license, ex press or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" withou t warranty of any kind, either express or implied, relating to sale and/or use of macom products i ncluding liability or warranties relating to fitness for a parti cular purpose, consequential or incidental damages, merchantability, or infringeme nt of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graph ics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without li mitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifes aving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale. M02016 20 cmos transimpedance amplifier with agc for fiber optic networks up to 1.25 gbps rev v4

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